Calculations Concerning the Electron Transit Time for an Ideal Cylindrical and an Ideal Spherical Vacuum Microelectronics Diode 圆柱面和球面真空微电子二极管内电子渡越时间的计算
Monte Carlo Calculation and Experiment Study on γ-ray Sensitivity of Vacuum Diode Detector 真空型康普顿探测器γ灵敏度的M.C模拟计算与实验研究
Analytic Solution of the Emission Characteristic of Vacuum Microelectronic Diode 真空微二极管发射特性的解析解
The Application of I-V Three-Halves Power Relationship to an Ideal Planar Parallel Vacuum Microelectronics Diode INTERACTION BETWEEN TWO PLANAR PARALLEL SURFACES 平面平行真空微电子二极管中二分之三次方关系式的应用
Research on Multi-pulsed High Intense Electron Vacuum Diode 多脉冲强流真空电子二极管研究
It was the difference of the influence of the cathode plasma generated in the process of emitting beams on the vacuum diode and the recovery velocity of the cathode plasma that resulted in the different envelope radii of the two beams. 实验得到的两个脉冲电子束包络半径不完全一致,这是由于天鹅绒阴极在发射电子束过程中产生的阴极等离子体对真空二极管的影响程度不同所导致的。
A Compact Coaxial Shunt for Measuring Intense Pulse Beam Current of Vacuum Diode 测真空二极管强电子束流的同轴分流器
Considering the influence of the space charge and certain hypothesis, the current-voltage equation inside an ideal planar parallel vacuum microelectronics ( P-VME) diode is approximately equal to a three halves power relationship. 在一定的假定条件下,考虑空间电荷影响,平面平行真空微电子(P-VMD)二极管中电流-电压近似按二分之三次方关系式工作。
In this paper, the photo-multiplier tube single photon detector, avalanche photon diode, vacuum avalanche photon diode and their basic principle of work and characteristics are introduced. Their advantages, disadvantages, and development are also discussed. 本文介绍了光电倍增管单光子探测器、雪崩光电二极管单光子探测器和真空单光子探测器以及它们的基本工作原理和特性,分析了它们各自的优缺点和未来的发展方向。
A process for the fabrication of microencapsulated vacuum microelectronic diode arrays is described and its experimental results are give. 本文介绍了一种微密封真空微电子二极管阵列的工艺及实验结果。
Analysis of the Tunneling Effect of Vacuum Microelectronic Diode 真空微电子二极管的隧道效应
Development of the vacuum diode with the high emission current densities ferroelectric cathode material 强发射电流铁电阴极真空二极管试验装置的研制
Reflux of electron of high voltage vacuum diode is one of the main factors to cause the dielectric surface flashover. 真空高压二极管中的电子回流是造成绝缘子表面闪络的重要因素。
The Fabrication of Vacuum Microelectronic Diode by Using Silicon Wafer Bonding Method 用硅片键合技术制备真空微二极管